? 2009 ixys corporation, all rights reserved v ces = 4000v i c25 = 30a v ce(sat) 3.1v IXGF30N400 ds99978c(11/09) symbol test conditions maximum ratings v ces t j = 25c to 150c 4000 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 30 a i c110 t c = 110c 15 a i cm t c = 25c, v ge = 20v, 1ms 360 a ssoa v ge = 20v, t vj = 125c, r g = 2 i cm = 300 a (rbsoa) clamped inductive load v ce 0.8 ? v ces p c t c = 25c 160 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c f c mounting force 20..120 / 4.5..27 nm/lb.in. v isol 50/60hz, 1 minute 4000 v~ weight 5g high voltage igbt for capacitor discharge applications ( electrically isolated tab) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 4000 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = 0.8 ? v ces , v ge = 0v 50 a note 2, t j = 100c 3 ma i ges v ce = 0v, v ge = 20v 200 na v ce(sat) i c = 30a, v ge = 15v, note 1 3.1 v i c = 90a 5.2 v features silicon chip on direct-copper bond (dcb) substrate isolated mounting surface 4000v electrical isolation high peak current capability low saturation voltage molding epoxies meet ul 94 v-0 flammability classification advantages high power density easy to mount applications capacitor discharge pulser circuits 1 = gate 5 = collector 2 = emitter isoplus i4-pak tm isolated tab 1 5 2 free datasheet http:///
ixys reserves the right to change limits, test conditions, and dimensions. IXGF30N400 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 30a, v ce = 10v, note 1 14 23 s i c(on) v ge = 15v, v ce = 20v, note 1 360 a c ies 3040 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 95 pf c res 30 pf q g 135 nc q ge i c = 30a, v ge = 15v, v ce = 600v 22 nc q gc 50 nc t d(on) 55 ns t r 146 ns t d(off) 210 ns t f 514 ns r thjc 0.78 c/w r thcs 0.15 c/w r thja 30 c/w resistive switching times i c = 30a, v ge = 15v, v ce = 1250v, r g = 2 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 isoplus i4-pak tm (hv) outline pin 1 = gate pin 2 = emitter pin 3 = collector tab 4 = isolated notes: 1. pulse test, t < 300 s, duty cycle, d < 2%. 2. device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway.
? 2009 ixys corporation, all rights reserved IXGF30N400 fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 2. extended output characteristics @ t j =25oc 0 40 80 120 160 200 240 280 320 360 400 0 2 4 6 8 1012141618202224262830 v ce - volts i c - amperes v ge = 15v 7v 5v 13v 9v 11v fig. 3. output characteristics @ t j =125oc 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v ce - volts i c - amperes v ge = 15v 13v 11v 9v 5v 7v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 60a i c = 30a i c = 15a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 56789101112131415 v ge - volts v ce - volts i c = 60a t j = 25oc 15a 30a fig. 6. input admittance 0 10 20 30 40 50 60 70 80 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGF30N400 fig. 11. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 7. transconductance 0 5 10 15 20 25 30 35 40 0 102030405060708090 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 q g - nanocoulombs v ge - volts v ce = 600v i c = 30a i g = 10ma fig. 9. reverse-bias safe operating area 0 50 100 150 200 250 300 350 400 800 1200 1600 2000 2400 2800 3200 3600 4000 v ce - volts i c - amperes t j = 125oc r g = 2 ? dv / dt < 10v / ns fig. 10. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2009 ixys corporation, all rights reserved IXGF30N400 ixys ref: g_30n400(8p)11-23-09-c fig. 12. resistive turn-on rise time vs. junction temperature 100 150 200 250 300 350 400 450 500 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 2 ? , v ge = 15v v ce = 1250v i d = 60a i d = 30a fig. 13. resistive turn-on rise time vs. drain current 100 150 200 250 300 350 400 450 500 15 20 25 30 35 40 45 50 55 60 i c - amperes t r - nanoseconds r g = 2 ? , v ge = 15v v ce = 1250v t j = 25oc t j = 125oc fig. 14. resistive turn-on switching times vs. gate resistance 100 1,000 10,000 1 10 100 1000 r g - ohms t r - nanoseconds 10 100 1,000 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 1250v i c = 60a, 30a fig. 15. resistive turn-off switching times vs. junction temperature 200 250 300 350 400 450 500 550 600 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 170 180 190 200 210 220 230 240 250 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 1250v i c = 30a i c = 60a fig. 16. resistive turn-off switching times vs. drain current 100 200 300 400 500 600 700 800 900 1000 1100 15 20 25 30 35 40 45 50 55 60 i c - amperes t f - nanoseconds 160 170 180 190 200 210 220 230 240 250 260 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 1250v t j = 125oc, 25oc fig. 17. resistive turn-off switching times vs. gate resistance 100 1,000 10,000 1 10 100 1000 r g - ohms t f - nanoseconds 100 1,000 10,000 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 1250v i c = 30a i c = 60a
|
